DocumentCode
2722594
Title
A Novel Dram Cell Design and Process for 70NM Generation
Author
Chung, C.H. ; Chien, T. ; Hsiao, J.S. ; Chu, C.H. ; Kuo, W.S. ; Cheng, C.C. ; Li, F. ; Nieh, S. ; Wu, S. ; Wang, B. ; Wang, C. ; Hu, T. ; Hsiao, G. ; Che, M. ; Hon, R.Y. ; Chen, H.M. ; Chou, G. ; Chang, G. ; Chou, L. ; Shu, H.C. ; Huang, K.Y. ; Tsai, V.
Author_Institution
Core Memory Tech. Dev. Div., ProMOS Technol. Inc., HsinChu
fYear
2006
fDate
24-26 April 2006
Firstpage
1
Lastpage
2
Abstract
A new DRAM cell design for 70nm generation is demonstrated. We develop a novel cell design which is different from that previously published for trench DRAM technology and can be shrunk into 70nm generation. Some innovative processes are also introduced to successfully demonstrated the cell function
Keywords
DRAM chips; integrated circuit design; isolation technology; nanotechnology; 70 nm; DRAM cell design; cell transistor; checker board pattern design; deep trench isolation; Capacitance; Costs; Dry etching; Filling; Grain size; Investments; Isolation technology; Process design; Random access memory; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
1-4244-0181-4
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2006.251084
Filename
4016620
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