Title :
Metal Gate Technology for 45nm and Beyond
Author :
Shibahara, Kentaro
Author_Institution :
Res. Center for Nanodevices & Syst., Hiroshima Univ.
Abstract :
Metal gate is one of the most expected technologies for CMOS device performance improvement. However, its integration to CMOS devices is not so easy compared with poly-Si gate devices. In addition it needs a work function tuning method to adjust FET threshold voltage. In the presentation, these problems are discussed based on author´s research result of Mo and FUSI (fully silicided) gate referring state of the art of this field
Keywords :
MOSFET; molybdenum; nanotechnology; work function; 45 nm; CMOS device performance improvement; Mo; field effect transistors; metal gate technology; poly-Si gate devices; CMOS technology; FETs; Impurities; Insulation; Metal-insulator structures; Nanoscale devices; Nitrogen; Silicidation; Silicides; Threshold voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0181-4
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2006.251086
