Title :
Electron Trapping Processes in High-K Gate Dielectrics and Nature of Traps
Author :
Bersuker, G. ; Gavartin, J. ; Sim, J. ; Park, C.S. ; Young, C. ; Nadkarni, S. ; Choi, R. ; Shluger, A. ; Lee, B.H.
Author_Institution :
Condensed Matter & Mater. Phys., Univ. Coll. London
Abstract :
The results in this paper suggest that migration of the electrons, captured during the fast charging process, to other available traps represents the major process responsible for the intrinsic Vt instability in the high-k NMOS transistors. The extracted trap characteristics are consistent with those of the oxygen vacancies in the monoclinic hafnia
Keywords :
MOSFET; dielectric materials; electromigration; electron traps; electron migration; electron trapping process; fast charging process; high-k NMOS transistors; high-k gate dielectrics; intrinsic voltage instability; monoclinic hafnia; oxygen vacancies; trap characteristics; Annealing; Electron emission; Electron traps; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Pulse measurements; Stress; Temperature distribution; Voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0181-4
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2006.251087
