Title :
HfSiON Gate Dielectric for 45nm Node Low-Power Device
Author :
Gan, Tian-Choy ; Wang, Howard C H ; Chen, Shang-Jr ; Tsai, Ching-Wei ; Lim, Peng-Soon ; Lin, Huan-Just ; Jin, Ying ; Tao, Hun-Jan ; Chen, Shih-Chang ; Leung, Ying Keung ; Diaz, Carlos H. ; Liang, Mong-Song ; Yuh-Jier Mii
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsinchu
Abstract :
A 1.4 nm EOT stack film of HfSiON with interfacial oxide layer (IL) is demonstrated with excellent electrical characteristics and reliability for 45 nm node low-power technology. Mobility comparable to SiON is achieved along with adequate nMOS PBTI lifetime, TDDB lifetime, and breakdown voltage (VBD). For the first time, we report lower VBD for the HfSiON stack film despite of 3 orders gate leakage reduction compared to the same EOT SiON. It is attributed to IL breakdown in the proposed two-step breakdown mechanism. This possibly limits the scalability of such a stack film. On the other side, over-drivability of HfSiON with thick underlying oxide boosts input/output (I/O) device performance significantly
Keywords :
MOSFET; dielectric materials; hafnium compounds; high-k dielectric thin films; low-power electronics; oxygen compounds; semiconductor device breakdown; semiconductor device reliability; silicon compounds; 45 nm; EOT stack film; HfSiON; PBTI lifetime; TDDB lifetime; breakdown voltage; gate dielectric; gate leakage reduction; interfacial oxide layer; low-power device; nMOS; Breakdown voltage; Capacitance-voltage characteristics; Dielectric devices; Electric breakdown; Gate leakage; Leakage current; MOS devices; Nitrogen; Scalability; Semiconductor films;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0181-4
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2006.251088
