Title :
HfxTayNz Metal Gate Electrodes for Advanced MOS Devices Applications
Author :
Cheng, Chin-Lung ; Chang-Liao, Kuei-Shu ; Wang, Tzu-Chen ; Wang, Tien-Ko ; Wang, Howard Chih-Hao
Author_Institution :
Inst. of Mech. & Electro-Mech. Eng., Nat. Formosa Univ., Huwei
Abstract :
With a small amount of hafnium (Hf) incorporated into tantalum nitride (TaN) metal gate, excellent thermal stability of electrical properties can be achieved up to post-metal anneal at 950 degC for 45 s. Besides, a work function tuning range from 4.2 to 4.6 eV can be obtained by suitably adjusting nitrogen (N) concentration in Hfx TayNz metal gate
Keywords :
MIS devices; electric properties; electrochemical electrodes; hafnium compounds; tantalum compounds; thermal stability; work function; 4.2 to 4.6 eV; 45 s; 950 C; HfxTayNz; advanced MOS devices; electrical properties; excellent thermal stability; metal gate electrodes; nitrogen concentration; post-metal anneal; work function tuning range; Electrodes; Hafnium; High-K gate dielectrics; MOS devices; Nitrogen; Plasma temperature; Rapid thermal annealing; Temperature measurement; Thermal stability; Voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0181-4
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2006.251091
