• DocumentCode
    2722721
  • Title

    Chemical reactions of silver and indium at 180°C annealing

  • Author

    Wu, Yuan-Yun ; Lin, Wen P. ; Lee, Chin C.

  • Author_Institution
    Electr. Eng. & Comput. Sci., Mater. & Manuf. Technol., Univ. of California, Irvine, CA, USA
  • fYear
    2012
  • fDate
    May 29 2012-June 1 2012
  • Firstpage
    717
  • Lastpage
    723
  • Abstract
    Since Ag and In react to form compound at room temperature was investigated, but the chemical reactions during bonding are not well understood. The Ag-In phase diagram shows two dominating intermetallic compounds (IMC), AgIn2 and Ag2In. Therefore, based on the following systematic experiments to study the chemical reactions of AgIn system and compound formation. Copper (Cu) substrates were electroplated with 40 μm thick Ag layer, followed by indium layer of 1, 5, 10, and 15 μm, respectively. Thick Ag layer is chosen to prevent In reaction with underlying Cu substrate. The samples were annealed at 180°C in 100 millitorr for 5 minutes to emulate the bonding conditions. The microstructure and the composition on the surface of the samples were evaluated using scanning electron microscopy (SEM) with energy dispersive X-ray spectroscopy (EDX). X-ray diffraction (XRD) was also employed to identify the IMC on the surface. The samples were then cut in cross section, polished, and studied also by SEM and EDX. The results show that, for the sample with 1μm thick indium, the In layer converts to Ag2In entirely after annealing. For sample with In layer thickness of 5 μm, AgIn2, Ag2In, and silver solid solution (Ag) all exist after annealing. No indium was identified. For sample having 10, and 15μm thick indium, In was detected on the surface, but was not found on the cross section. The polishing process probably bevels the thin In layer on the surface, making it invisible. We next studied what would happen if the Ag was annealed first before plating In. After plating the Ag layer, samples were annealed at 450°C for 3 hours to grow Ag grains. This was followed by plating 10μm In and annealing at 180°C. The result shows AgIn2, Ag2In as well as In. Significant In remains on the surface. The thicknesses of AgIn2 and Ag2- /sub>In layers are thinner than the sample whose Ag is not annealed.
  • Keywords
    annealing; bonding processes; chemical reactions; indium alloys; polishing; silver alloys; Ag-In; EDX; IMC; SEM; X-ray diffraction; XRD; annealing; bonding; compound formation; copper substrates; cross section; energy dispersive X-ray spectroscopy; indium chemical reactions; intermetallic compounds; microstructure; phase diagram; polishing process; scanning electron microscopy; silver chemical reactions; silver solid solution; size 1 mum; size 10 mum; size 15 mum; size 40 mum; size 5 mum; temperature 180 degC; temperature 293 K to 298 K; temperature 450 degC; time 3 hour; time 5 min; Annealing; Bonding; Chemicals; Indium; Scanning electron microscopy; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
  • Conference_Location
    San Diego, CA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4673-1966-9
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2012.6248911
  • Filename
    6248911