NMOS and PMOS Metal Gate Transistors with Junctions Activated by Laser Annealing

Author

Severi, S. ; Augendre, I.E. ; Falepin, A. ; Kerner, C. ; Ramos, J. ; Eyben, P. ; Vandervost, W. ; Curatola, C. ; Felch, S. ; Nouri, F. ; Kraus, P. ; Parihar, V. ; Noda, T. ; Schreutelkamp, R. ; Hoffmann, T.Y. ; Absil, P. ; De Meyer, K. ; Jurczak, M. ; Bie

Author_Institution

IMEC Interuniv. Microelectron. Center, Leuven

fYear

2006

fDate

24-26 April 2006

Firstpage

1

Lastpage

2

Abstract

We demonstrate for the first time the integration of metal gate electrode and non-melt laser annealed junctions in both NMOS and PMOS transistors. We report the highest drive current so far in laser annealed devices with good short channel effects (SCE) control down to 40nm gate length. Overlap length is quantified by CV and SSRM, values of 2 nm for both NMOS and PMOS laser-annealed transistors are reported for the first time

Keywords

MOSFET; electrodes; laser beam annealing; NMOS metal gate transistors; PMOS metal gate transistors; drive current; junction activation; laser annealed devices; laser annealing; metal gate electrode; nonmelt laser annealed junctions; short channel effects; Annealing; Degradation; Electrodes; Implants; MOS devices; MOSFETs; Parasitic capacitance; Temperature; Transistors; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2006 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

1-4244-0181-4

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2006.251093

Filename

4016629