DocumentCode :
2722808
Title :
Effect of H2 Addition during Cu Thin Film Sputtering
Author :
Ooka, Masahiro ; Yokoyama, Shin
Author_Institution :
Res. Center for Nanodevices & Syst., Hiroshima Univ.
fYear :
2006
fDate :
24-26 April 2006
Firstpage :
1
Lastpage :
2
Abstract :
In this paper, we study the effect of H2 adding to Cu sputtering and also investigate the influence on the subsequent Cu electroplating
Keywords :
copper alloys; electroplating; hydrogen compounds; metallic thin films; sputter etching; Cu; H2; copper electroplating; copper thin film sputtering; hydrogen gas addition; Argon; Atomic measurements; Conductivity; Hydrogen; Oxidation; Rough surfaces; Sputtering; Surface morphology; Surface roughness; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
1-4244-0181-4
Electronic_ISBN :
1524-766X
Type :
conf
DOI :
10.1109/VTSA.2006.251096
Filename :
4016632
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2722808
بازگشت