Title :
Die-Based Electromigration Characterization For Copper/Low-K Dual Damascene Interconnects
Author :
Lee, Shou-Chung ; Oates, Anthony S.
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsinchu
Abstract :
We demonstrate that electromigration (EM) failure distributions can be determined from multi-link via chain test structures by the analysis of successive failures of in the chain. Failure distributions from one multi-link structure are consistent with that of conventional single link structure. This approach to testing results in improved defect sensitivity and allows the variation of EM failure characteristics across wafers to be determined
Keywords :
copper alloys; electromigration; failure analysis; integrated circuit interconnections; low-k dielectric thin films; Cu; chain test structures; copper/low-k dielectrics; die-based electromigration characterization; dual damascene interconnects; failure distributions; multilink structure; Atomic layer deposition; Copper; Electromigration; Electrons; Failure analysis; Manufacturing industries; Metals industry; Optical character recognition software; Semiconductor device manufacture; Testing;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0181-4
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2006.251098
