Title :
RF Extrinsic Resistance Extraction Considering Neutral-Body Effect for Partially-Depleted SOI MOSFETs
Author :
Wang, Sheng-Chun ; Su, Pin ; Chen, Kun-Ming ; Lin, Chien-Ting ; Liang, Victor ; Huang, Guo-Wei
Author_Institution :
Dept. of Electron. Eng., National Chiao Tung Univ., Hsinchu
Abstract :
The extraction of extrinsic resistances is essential to RF CMOS modeling. In this work, we investigate the extrinsic resistance extraction for PD SOI MOSFETs. We have shown that, for RF SOI MOSFETs, the coupling path between the source and drain terminals through the neutral-body region beneath the gate-oxide layer makes the resistance expressions behave frequency-dependently. After taking this effect into account, we develop a physical RF extrinsic resistance extraction methodology for PD SOI MOSFETs
Keywords :
MOSFET; equivalent circuits; semiconductor device models; silicon-on-insulator; PD SOI MOSFET; RF CMOS modeling; RF SOI MOSFET; RF extrinsic resistance extraction; coupling path; neutral-body effect; partially-depleted SOI MOSFET; Capacitance; Coupling circuits; Electronics industry; Equivalent circuits; Fingers; Geometry; Immune system; MOSFETs; Radio frequency; Roentgenium;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0181-4
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2006.251102
