RF Extrinsic Resistance Extraction Considering Neutral-Body Effect for Partially-Depleted SOI MOSFETs

Author

Wang, Sheng-Chun ; Su, Pin ; Chen, Kun-Ming ; Lin, Chien-Ting ; Liang, Victor ; Huang, Guo-Wei

Author_Institution

Dept. of Electron. Eng., National Chiao Tung Univ., Hsinchu

fYear

2006

fDate

24-26 April 2006

Firstpage

1

Lastpage

2

Abstract

The extraction of extrinsic resistances is essential to RF CMOS modeling. In this work, we investigate the extrinsic resistance extraction for PD SOI MOSFETs. We have shown that, for RF SOI MOSFETs, the coupling path between the source and drain terminals through the neutral-body region beneath the gate-oxide layer makes the resistance expressions behave frequency-dependently. After taking this effect into account, we develop a physical RF extrinsic resistance extraction methodology for PD SOI MOSFETs

Keywords

MOSFET; equivalent circuits; semiconductor device models; silicon-on-insulator; PD SOI MOSFET; RF CMOS modeling; RF SOI MOSFET; RF extrinsic resistance extraction; coupling path; neutral-body effect; partially-depleted SOI MOSFET; Capacitance; Coupling circuits; Electronics industry; Equivalent circuits; Fingers; Geometry; Immune system; MOSFETs; Radio frequency; Roentgenium;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2006 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

1-4244-0181-4

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2006.251102

Filename

4016638