Title :
A New Series Resistance and Mobility Extraction Method by BSIM Model for Nano-Scale MOSFETs
Author :
Chen, William P N ; Su, P. ; Wang, J.-S. ; Lien, C.H. ; Chang, C.H. ; Goto, K. ; Diaz, C.H.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsin-Chu
Abstract :
In this work, a simplified BSIM-based model has been proposed to solve the above issues contributed by halo implants [Goto, K, et al., 2003]. In this new methodology, Rsd and mueff can be uniquely extracted in nano-scale devices. Furthermore, the extracted LG dependency of mueff may serve as a good indicator for monitoring the relationship between geometry and stress parameters
Keywords :
MOSFET; carrier mobility; semiconductor device models; BSIM model; halo implants; mobility dependency; mobility extraction method; nano-scale MOSFET; series resistance; stress parameter; Condition monitoring; Degradation; Electric resistance; Geometry; Implants; MOS devices; MOSFETs; Nanoscale devices; Semiconductor device manufacture; Virtual manufacturing;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0181-4
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2006.251104
