Thermal effects on through-silicon via (TSV) signal integrity

The thermal effect on through-silicon via (TSV) noise coupling and S₂₁ of TSV channel were measured in both frequency and time domain from corresponding TSV based passive chips. These measurement results are analyzed using the temperature-dependent TSV lumped model to TSV channel and shows good correlation with measurement. Under the hundreds-of-MHz frequency range, increasing temperature decreases the S₂₁ of TSV channel, but over that frequency range, increasing temperature increases the S₂₁. These phenomena are explained from the model which thermal dependence of the materials is applied.