Title :
A gate drive circuit for silicon carbide JFET
Author :
Mino, Kazuaki ; Herold, Simon ; Kolar, J.W.
Author_Institution :
Power Electron. Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
In this paper, a gate drive circuit for a 1300 V/4 A SiC-JFET is proposed and evaluated experimentally for a switching frequency of 200 kHz. Furthermore, a comparison of the switching behavior of a SiC-JFET/Si-MOSFET cascode and of the SiC-JFET driven by the proposed gate drive circuit is shown.
Keywords :
MOSFET; junction gate field effect transistors; power semiconductor switches; silicon compounds; switching circuits; wide band gap semiconductors; 1300 V; 200 kHz; 4 A; SiC; gate drive circuit; junction gate field effect transistors; metal-oxide-semiconductor field effect transistor; power semiconductors; silicon carbide JFET; switching behavior; switching frequency; Breakdown voltage; JFET circuits; Power semiconductor switches; Roentgenium; Silicon carbide; Switching circuits; Temperature; Thermal resistance; Tuned circuits; Turning;
Conference_Titel :
Industrial Electronics Society, 2003. IECON '03. The 29th Annual Conference of the IEEE
Print_ISBN :
0-7803-7906-3
DOI :
10.1109/IECON.2003.1280217
