Title :
Zero defects or zero stuck-at faults-CMOS IC process improvement with IDDQ
Author :
Soden, Jerry M. ; Fritzemeier, Ronald R. ; Hawkins, Charles F.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Abstract :
The authors suggest that continuous quality improvement with the goal of zero defects requires a physical defect metric which goes beyond 100% SAF (stuck-at-fault) coverage. It is further suggested that I DDQ testing is a highly efficient technique for detecting most dominant types of CMOS IC defects and therefore should be considered for the manufacture of high-quality, high reliability CMOS ICs
Keywords :
CMOS integrated circuits; electric current measurement; fault location; integrated circuit testing; production testing; quality control; CMOS IC defects; IC testing; QC; zero defects; zero stuck-at faults; CMOS integrated circuits; CMOS logic circuits; Circuit faults; Circuit testing; Delay; Integrated circuit interconnections; Integrated circuit testing; Logic testing; Semiconductor device modeling; Very large scale integration;
Conference_Titel :
Test Conference, 1990. Proceedings., International
Conference_Location :
Washington, DC
Print_ISBN :
0-8186-9064-X
DOI :
10.1109/TEST.1990.114026
