Static and dynamic characterization of silicon carbide bipolar junction transistor

Silicon carbide (SiC) is a very promising material because of its wide bandgap. Recently, semiconductor devices based on SiC have been developed for use in high data voltage, high temperature and high radiation conditions. The purpose of this paper is to present the study of high-voltage SiC bipolar junction transistor (BJT), in particular the estimation of the minority carrier lifetime in the base and in the collector regions. The causes of SiC BJT´s low gain are also proposed.