DocumentCode :
2723044
Title :
Nonlinear effects of TSV and harmonic generation
Author :
Cho, Jonghyun ; Kim, Joohee ; Pak, Jun So ; Lee, Junho ; Lee, Hyungdong ; Park, Kunwoo ; Kim, Joungho
Author_Institution :
Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
fYear :
2012
fDate :
May 29 2012-June 1 2012
Firstpage :
834
Lastpage :
838
Abstract :
The nonlinear effects of through-silicon via (TSV) is first demonstrated and analyzed in this paper. TSV constructs metal-insulator-semiconductor (MIS) structure, which generates depletion region depending on the TSV bias voltage. Due to the voltage-dependent capacitance of TSV, it shows nonlinear effects and harmonic generations both at the transmitted and the coupled signal. The SPICE-compatible TSV capacitance model is proposed and is used for circuit simulation, which demonstrates TSV nonlinearity. Also TSV nonlinearity is measured by TSV test vehicle, which is manufactured by Hynix Semiconductor Inc. using via-last TSV process.
Keywords :
MIS structures; SPICE; harmonic analysis; integrated circuit manufacture; integrated circuit modelling; three-dimensional integrated circuits; Hynix Semiconductor Inc; MIS structure; SPICE-compatible TSV capacitance model; TSV bias voltage; TSV nonlinear effects; TSV test vehicle; TSV voltage-dependent capacitance; circuit simulation; depletion region; harmonic generation; metal-insulator-semiconductor structure; through-silicon via nonlinear effects; Capacitance; Couplings; Mathematical model; Silicon; Substrates; Through-silicon vias; Vehicles;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location :
San Diego, CA
ISSN :
0569-5503
Print_ISBN :
978-1-4673-1966-9
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2012.6248930
Filename :
6248930
Link To Document :
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