• DocumentCode
    2723193
  • Title

    A high-speed pin-memory architecture using multiport dynamic RAMs

  • Author

    Tsai, Sheng-Jen ; Lee, Wha-Joon

  • Author_Institution
    AT&T Bell Lab., Princeton, NJ, USA
  • fYear
    1990
  • fDate
    10-14 Sep 1990
  • Firstpage
    347
  • Lastpage
    354
  • Abstract
    The authors describe a novel pin-memory design based on multiport dynamic video RAMs (VRAMs). Each pin (or channel) has a 512 K pattern depth allows a 100-MHz vector rate, and is economical in both size (3×1.5 in) and cost (less than $100). These achievements were made possible by a VRAM-oriented pin-memory architecture and the associated memory control circuitry, which are instrumental in facilitating the following features: the arbitration of the read/write and refresh operations, the coordination of two processors that access the memory at different stages of a test cycle, the provision for as many pins as possible to share components to reduce the overall cost and space, and the preservation of the independence of an individual pin so that it can be either active or idle for a particular burst regardless of the status of the others. The design described has been fully implemented in the High Speed Test System (HSTS) and functions successfully
  • Keywords
    DRAM chips; automatic testing; circuit CAD; memory architecture; storage management chips; 100 MHz; 512 KB; high-speed pin-memory architecture; memory control circuitry; read/write; refresh; ultiport dynamic RAMs; video RAMs; Circuit testing; Computer peripherals; Costs; Permission; Pins; Power generation economics; Random access memory; Read-write memory; Research and development; System testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Test Conference, 1990. Proceedings., International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-8186-9064-X
  • Type

    conf

  • DOI
    10.1109/TEST.1990.114041
  • Filename
    114041