DocumentCode
2723193
Title
A high-speed pin-memory architecture using multiport dynamic RAMs
Author
Tsai, Sheng-Jen ; Lee, Wha-Joon
Author_Institution
AT&T Bell Lab., Princeton, NJ, USA
fYear
1990
fDate
10-14 Sep 1990
Firstpage
347
Lastpage
354
Abstract
The authors describe a novel pin-memory design based on multiport dynamic video RAMs (VRAMs). Each pin (or channel) has a 512 K pattern depth allows a 100-MHz vector rate, and is economical in both size (3×1.5 in) and cost (less than $100). These achievements were made possible by a VRAM-oriented pin-memory architecture and the associated memory control circuitry, which are instrumental in facilitating the following features: the arbitration of the read/write and refresh operations, the coordination of two processors that access the memory at different stages of a test cycle, the provision for as many pins as possible to share components to reduce the overall cost and space, and the preservation of the independence of an individual pin so that it can be either active or idle for a particular burst regardless of the status of the others. The design described has been fully implemented in the High Speed Test System (HSTS) and functions successfully
Keywords
DRAM chips; automatic testing; circuit CAD; memory architecture; storage management chips; 100 MHz; 512 KB; high-speed pin-memory architecture; memory control circuitry; read/write; refresh; ultiport dynamic RAMs; video RAMs; Circuit testing; Computer peripherals; Costs; Permission; Pins; Power generation economics; Random access memory; Read-write memory; Research and development; System testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Conference, 1990. Proceedings., International
Conference_Location
Washington, DC
Print_ISBN
0-8186-9064-X
Type
conf
DOI
10.1109/TEST.1990.114041
Filename
114041
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