Title :
V-shaped PTCR properties of (Pb,Sr)TiO3 materials prepared by conventional, rapid thermal and microwave sintering processes
Author :
Chang, H.Y. ; Lin, I.N. ; Lin, Y.Y. ; Hu, C.T.
Author_Institution :
Mater. Sci. Center, Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
(Pb0.6Sr0.4)TiO3 materials containing Y3+ as donors and TiO2/SiO2 as sintering aids were densified by either conventional sintering (CS), rapid thermal sintering (RTS) or microwave sintering (MS) process. V-shaped PTCR characteristics with Tc=220°C were obtained by conventional sintering at 1270-1300°C for 30 min. Double-Tc PTCR behaviors with Tc1=260°C and Tc2=430°C were resulted by rapid-thermal sintering at 1250-1300°C for 30 min. By contrast, a single high-Tc resistivity-temperature (ρ-T) properties with Tc-value as high as 460°C was observed by microwave sintering of these materials at 1100°C for 10 min. The unique properties of these materials were ascribed to the formation of core-shell microstructure, which was induced by rapid cooling rate after sintering in RTS or MS process. The core was deficient and the shell was riched in Pb-species. The composition of the shell was estimated to be around (Pb0.9Sr 0.1)TiO3. A conduction model was proposed based on these observations
Keywords :
ceramics; densification; electrical resistivity; ferroelectric Curie temperature; ferroelectric semiconductors; lead compounds; microwave heating; rapid thermal processing; sintering; strontium compounds; yttrium compounds; (Pb,Sr)TiO3 materials; (Pb0.6Sr0.4)TiO3; 10 min; 1100 degC; 1250 to 1300 degC; 1270 to 1300 degC; 220 degC; 260 degC; 30 min; 430 degC; 460 degC; TiO2-SiO2; TiO2/SiO2 sintering aids; V-shaped PTCR properties; Y3+ donors; conduction model; conventional sintering; core-shell microstructure; densification; double-Tc PTCR behavior; ferroelectric Curie temperature; microwave sintering; positive temperature coefficient of resistivity; rapid cooling rate; rapid thermal sintering; semiconducting materials; shell composition; single high-Tc resistivity-temperature properties; Ceramics; Conducting materials; Conductivity; Cooling; Electromagnetic heating; Ferroelectric materials; Powders; Rapid thermal processing; Semiconductor materials; Temperature;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.598192