• DocumentCode
    2723756
  • Title

    Cu wire and Pd-Cu wire package reliability and molding compounds

  • Author

    Abe, Hidenori ; Kang, Dong Chul ; Yamamoto, Takashi ; Yagihashi, Takashi ; Endo, Yoshinori ; Saito, Hiroyuki ; Horie, Takahiro ; Tamate, Hironori ; Ejiri, Yoshinori ; Watanabe, Naoki ; Iwasaki, Tomio

  • Author_Institution
    Hitachi Chem. Co., Ltd., Yuki, Japan
  • fYear
    2012
  • fDate
    May 29 2012-June 1 2012
  • Firstpage
    1117
  • Lastpage
    1123
  • Abstract
    Cu wire is drastically replacing Au wire due to surge of Au price. However, Cu wire package has poorer humidity reliability than Au wire package. Although Pd coated Cu wire package could show better humidity reliability than Cu wire, it is still worse than Au. Enough information regarding failure mechanism was not available. For failure analysis, x-section has been widely used to identify the Cu/Al IMC after failure. However, the x-section is the results of corrosion reaction and doesn´t show the IMC status before corrosion. Therefore, the failure mechanism could not be estimated precisely. We used chemical model simulation to predict what kinds of IMC could be created after wire bonding, then which IMC could be corroded more easily during HAST. The Desorption energy was used to estimate reactivity between specified Cu/Al IMC and chlorine ion. The simulation suggested that the formation of Cu rich and Cu poor Cu/Al IMC and the Cu rich IMC was estimated to be corroded by chlorine ion. These chemical model simulations are the effective way to have fundamental understanding of the mechanism of Cu/Al IMC corrosion. Furthermore, chemical model simulation for Pd coated Cu wire was done to explore the effect of Pd existence and distribution of Pd in Cu/Al IMC. Dispersed Pd contributed to create new IMC of Cu/Al/Pd instead of easily corroded Cu rich Cu/Al IMC. Cu and Al diffusion and also Cl ion diffusion were inhibited by Pd at surface. Even Cl ion catching effect by Pd is also discussed. To improve humidity reliability performance with Cu wire, we developed new ion trapper using chemical model simulation technique. Developed molding compounds with the ion trapper showed significant improvement at bias HAST with Cu wire, which was even better than conventional Cu wire compatible molding compounds.
  • Keywords
    aluminium alloys; copper alloys; corrosion testing; integrated circuit metallisation; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; lead bonding; moulding; palladium alloys; Cu; Cu-Al; HAST; Pd-Cu; chemical model simulation technique; corrosion reaction; failure analysis; humidity reliability; intermetallic compound; ion trapper; molding compounds; wire package reliability; x-section; Bonding; Chemicals; Compounds; Corrosion; Humidity; Reliability; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
  • Conference_Location
    San Diego, CA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4673-1966-9
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2012.6248975
  • Filename
    6248975