A 1.2V 57mW mobile ISDB-T SoC in 90nm CMOS

Author

Lee, Jeong-Cheol ; Hwang, Myung-Woon ; Hong, Seokyong ; Ahn, Moon-Kyung ; Jeong, Seongheon ; Oh, Yong-Hun ; Lim, Seungbum ; Cho, Hyunha ; Moon, Jecheol ; Lee, Jong-Ryul ; Han, Sangwoo ; Handa, Che ; Fujie, Tomohito ; Hashimoto, Katsuya ; Tamukai, Kengo

Author_Institution

Future Commun. IC Inc., Sungnam, South Korea

fYear

2009

fDate

16-18 Nov. 2009

Firstpage

345

Lastpage

348

Abstract

This paper presents a 1.2 V 57 mW SoC using a 90 nm CMOS process in mobile ISDB-T application. This achieves -98.5 dBm sensitivity at QPSK, CR = -2/3 with 2.5 dB NF of RF tuner block and 5.6 dB C/N of OFDM block at UHF-band. To integrate RF tuner and OFDM in a small single die, a wideband single LC-VCO operating from 1.8 GHz to 3.3 GHz is proposed and OFDM is designed by hard-wired logic.

Keywords

CMOS integrated circuits; low-power electronics; mobile television; system-on-chip; CMOS; RF tuner block; hard-wired logic; mobile ISDB-T SoC; power 57 mW; size 90 nm; system-on-chip; voltage 1.2 V; wideband single LC-VCO; CMOS process; Chromium; Communication standards; Data communication; Digital multimedia broadcasting; Multiplexing; OFDM; Quadrature phase shift keying; Radio frequency; Tuners; ISDB-T; OFDM; RF tuner; System-on-Chip;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2009. A-SSCC 2009. IEEE Asian

Conference_Location

Taipei

Print_ISBN

978-1-4244-4433-5

Electronic_ISBN

978-1-4244-4434-2

Type

conf

DOI

10.1109/ASSCC.2009.5357166

Filename

5357166