• DocumentCode
    2723874
  • Title

    Silver alloy wire bonding

  • Author

    Kai, Liao Jun ; Hung, Liang Yi ; Wu, Li Wei ; Chiang, Men Yeh ; Jiang, Don Son ; Huang, C.M. ; Wang, Yu Po

  • Author_Institution
    Siliconware Precision Ind. Co., Ltd., Taichung, Taiwan
  • fYear
    2012
  • fDate
    May 29 2012-June 1 2012
  • Firstpage
    1163
  • Lastpage
    1168
  • Abstract
    In semiconductor packaging, wire bonding is the main technology for electrical connections between chip and leadframe or substrate. Gold wire bonding has the advantages of a fast bonding process, excellent electrical property and stable chemical property. It has been widely used in various electronic packages. Gold prices have been raised significantly over the last few years. Many manufactures have been investigating ways to replace the conventional gold wire with various new materials. Copper wire bonding is an alternative interconnection technology. Cu wire has superior electrical and thermal conductivities as well as higher tensile strength, elongation and better “ball neck” strength. On the other hand, the higher hardness of Cu wire requires higher ultrasonic power and bonding force, which lead to high risk of cratering for ball bonding and tearing for wedge bonding. These will cause some package limitation and wire bonder machine downtime or low units per hour (UPH). Ag alloy wire has low Young´s modulus and hardness property. It is a low cost wire bonding solution other than gold wire. In this study, Ag alloy wire is proposed as an alternative to Au bonding wire. Emphasis is placed on the wire bonding workability and reliability of using Ag-Au-Pd alloy wire for TSOP package. Also, wire bonding parameter such as electronic flame off (EFO), bond force, ultrasonic power, heat block temperature and time for ball and wedge bonding are optimized. Furthermore, the response for parameter optimization is determined by the Dage bond tester. Package reliability is determined through environmental tests that include pressure cooker test (PCT), temperature cycle test (TCT) and high temperature storage life test (HTSL). The tested samples were studied by focused ion beam (FIB), scanning electron microscopy (SEM) and energy dispersive spectrometer analyses (EDS). Intermetallic compound growth behavior during reliability test is characterized and compared t- Al-Au and Al-Cu systems. Ag-Al didn´t have excessive volume variation and void occurrence to get better bonding performance during various reliability tests.
  • Keywords
    Young´s modulus; electrical conductivity; elongation; focused ion beam technology; gold alloys; integrated circuit interconnections; lead bonding; palladium alloys; scanning electron microscopy; semiconductor device packaging; semiconductor device reliability; silver alloys; tensile strength; thermal conductivity; Ag-Au-Pd alloy wire; AgAuPd; Dage bond tester; TSOP package; Young´s modulus; ball bonding; ball neck strength; copper wire bonding; electrical conductivity; electrical connections; electronic flame off; electronic packages; elongation; energy dispersive spectrometer analyses; focused ion beam; gold wire bonding; hardness property; high temperature storage life test; interconnection technology; package reliability; parameter optimization; pressure cooker test; scanning electron microscopy; semiconductor packaging; silver alloy; temperature cycle test; tensile strength; thermal conductivity; ultrasonic power; wedge bonding; wire bonder machine downtime; Bonding; Compounds; Gold; Intermetallic; Reliability; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
  • Conference_Location
    San Diego, CA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4673-1966-9
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2012.6248983
  • Filename
    6248983