• DocumentCode
    2724105
  • Title

    Novel approaches of wafer level packaging for MEMS devices

  • Author

    Liu, Cheng-Hsiang ; Chang, Hong-Da ; Liao, Hsin-Yi ; Li, Kuo-Hsiang ; Lin, Chen-Han ; Chen, Wei-Yu ; Lin, Tse-Yuan

  • Author_Institution
    Siliconware Precision Ind. Co., Ltd. (SPIL), Taichung, Taiwan
  • fYear
    2012
  • fDate
    May 29 2012-June 1 2012
  • Firstpage
    1260
  • Lastpage
    1266
  • Abstract
    Wafer Level Packaging (WLP) has started to shine and played a prominent role in recent years in both semiconductor and Integrated Circuit (IC) field, especially in now thriving Micro-Electro-Mechanical System (MEMS) applications on account of its distinctive operating mechanism and adaptive design variety. In this study, several crucial WLP technologies are disclosed in detail, including Wafer to Wafer (W2W) bonding, wafer level wire bonding, wafer level compound molding and lapping. Simplified and conceptual process flow of MEMS WLP and development approaches are introduced and explained. Furthermore, relevant experimental results and technology characteristics, including glass frit printing and bonding results & shear strength in W2W bonding technology, wire shift & vertical loop height & ball shear & wire pull in wafer level wire bonding technology, Thickness to Thickness Variation (TTV) & wire sweep & warpage in wafer level compound molding technology, have also been extensively demonstrated. After MEMS WLP packaging process, device performance is then determined by the difference of voltage readout with the implementation of Wafer Level Dynamic Test (WLDT) before and after Highly Accelerated Stress Test (HAST), and the wafer device yield is also presented.
  • Keywords
    integrated circuit packaging; lead bonding; micromechanical devices; semiconductor device packaging; wafer level packaging; HAST; IC field; MEMS WLP conceptual process flow; MEMS WLP packaging process; MEMS devices; TTV; W2W bonding technology; WLDT; WLP technologies; adaptive design variety; ball shear; distinctive operating mechanism; glass frit printing; highly accelerated stress test; integrated circuit field; microelectromechanical system devices; semiconductor field; thickness to thickness variation; vertical loop height; wafer device; wafer level compound lapping; wafer level compound molding technology; wafer level dynamic test; wafer level packaging; wafer level wire bonding technology; wafer to wafer bonding; wire shift; Bonding; Compounds; Glass; Lapping; Micromechanical devices; Packaging; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
  • Conference_Location
    San Diego, CA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4673-1966-9
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2012.6248997
  • Filename
    6248997