DocumentCode
2724105
Title
Novel approaches of wafer level packaging for MEMS devices
Author
Liu, Cheng-Hsiang ; Chang, Hong-Da ; Liao, Hsin-Yi ; Li, Kuo-Hsiang ; Lin, Chen-Han ; Chen, Wei-Yu ; Lin, Tse-Yuan
Author_Institution
Siliconware Precision Ind. Co., Ltd. (SPIL), Taichung, Taiwan
fYear
2012
fDate
May 29 2012-June 1 2012
Firstpage
1260
Lastpage
1266
Abstract
Wafer Level Packaging (WLP) has started to shine and played a prominent role in recent years in both semiconductor and Integrated Circuit (IC) field, especially in now thriving Micro-Electro-Mechanical System (MEMS) applications on account of its distinctive operating mechanism and adaptive design variety. In this study, several crucial WLP technologies are disclosed in detail, including Wafer to Wafer (W2W) bonding, wafer level wire bonding, wafer level compound molding and lapping. Simplified and conceptual process flow of MEMS WLP and development approaches are introduced and explained. Furthermore, relevant experimental results and technology characteristics, including glass frit printing and bonding results & shear strength in W2W bonding technology, wire shift & vertical loop height & ball shear & wire pull in wafer level wire bonding technology, Thickness to Thickness Variation (TTV) & wire sweep & warpage in wafer level compound molding technology, have also been extensively demonstrated. After MEMS WLP packaging process, device performance is then determined by the difference of voltage readout with the implementation of Wafer Level Dynamic Test (WLDT) before and after Highly Accelerated Stress Test (HAST), and the wafer device yield is also presented.
Keywords
integrated circuit packaging; lead bonding; micromechanical devices; semiconductor device packaging; wafer level packaging; HAST; IC field; MEMS WLP conceptual process flow; MEMS WLP packaging process; MEMS devices; TTV; W2W bonding technology; WLDT; WLP technologies; adaptive design variety; ball shear; distinctive operating mechanism; glass frit printing; highly accelerated stress test; integrated circuit field; microelectromechanical system devices; semiconductor field; thickness to thickness variation; vertical loop height; wafer device; wafer level compound lapping; wafer level compound molding technology; wafer level dynamic test; wafer level packaging; wafer level wire bonding technology; wafer to wafer bonding; wire shift; Bonding; Compounds; Glass; Lapping; Micromechanical devices; Packaging; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location
San Diego, CA
ISSN
0569-5503
Print_ISBN
978-1-4673-1966-9
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2012.6248997
Filename
6248997
Link To Document