DocumentCode
27243
Title
Switching of whispering gallery mode in hexagonal GaN microdisk by change in condition of reflection surface
Author
Kouno, T. ; Sakai, Masayuki ; Kishino, Katsumi ; Hara, Kentaro
Author_Institution
Dept. of Electron. & Mater. Sci., Shizuoka Univ., Hamamatsu, Japan
Volume
51
Issue
2
fYear
2015
fDate
1 22 2015
Firstpage
170
Lastpage
172
Abstract
Optical microresonant mode switching in a hexagonal GaN microdisk, which acts as a whispering gallery mode (WGM) and quasi-WGM (QWGM), has been demonstrated by a change in the condition of the reflection surface under a room temperature photoluminescence (RT-PL) measurement. It has been confirmed that only the WGM in the microdisk, which uses all side walls of a microdisk as the reflection surface, was strongly affected by attaching another microdisk on a side wall. The result indicates that the WGM can be controlled independently by external factors.
Keywords
III-V semiconductors; gallium compounds; light reflection; microcavities; micromechanical resonators; optical switches; optical variables measurement; photoluminescence; whispering gallery modes; wide band gap semiconductors; GaN; QWGM; RT-PL measurement; hexagonal GaN microdisk; optical microresonant mode switching; quasiwhispering galley mode; reflection surface; room temperature photoluminescence measurement; side wall; temperature 293 K to 298 K;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2014.3724
Filename
7014450
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