• DocumentCode
    27243
  • Title

    Switching of whispering gallery mode in hexagonal GaN microdisk by change in condition of reflection surface

  • Author

    Kouno, T. ; Sakai, Masayuki ; Kishino, Katsumi ; Hara, Kentaro

  • Author_Institution
    Dept. of Electron. & Mater. Sci., Shizuoka Univ., Hamamatsu, Japan
  • Volume
    51
  • Issue
    2
  • fYear
    2015
  • fDate
    1 22 2015
  • Firstpage
    170
  • Lastpage
    172
  • Abstract
    Optical microresonant mode switching in a hexagonal GaN microdisk, which acts as a whispering gallery mode (WGM) and quasi-WGM (QWGM), has been demonstrated by a change in the condition of the reflection surface under a room temperature photoluminescence (RT-PL) measurement. It has been confirmed that only the WGM in the microdisk, which uses all side walls of a microdisk as the reflection surface, was strongly affected by attaching another microdisk on a side wall. The result indicates that the WGM can be controlled independently by external factors.
  • Keywords
    III-V semiconductors; gallium compounds; light reflection; microcavities; micromechanical resonators; optical switches; optical variables measurement; photoluminescence; whispering gallery modes; wide band gap semiconductors; GaN; QWGM; RT-PL measurement; hexagonal GaN microdisk; optical microresonant mode switching; quasiwhispering galley mode; reflection surface; room temperature photoluminescence measurement; side wall; temperature 293 K to 298 K;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2014.3724
  • Filename
    7014450