Punchthrough transient voltage suppressor for EOS/ESD protection of low-voltage IC´s

Author

Yu, Bin ; King, Ya-Chin ; Pohlman, Jeff ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1995

fDate

12-14 Sept. 1995

Firstpage

27

Lastpage

33

Abstract

A silicon transient voltage suppresser (TVS) is presented for off-chip EOS/ESD protection of ICs with supply voltages ranging from 3.3 V down to 1.5 V. The np/sup +/p/sup -/n four-layer TVS operates in punchthrough mode instead of the avalanche mode as in conventional TVS diodes. Performance was investigated by device simulator TMA-MEDICI for several device structure options for ultra-low-voltage EOS/ESD protection.

Keywords

electrostatic discharge; elemental semiconductors; leakage currents; monolithic integrated circuits; overvoltage protection; protection; semiconductor diodes; silicon; transient response; 1.5 to 3.3 V; EOS/ESD protection; Si; TMA-MEDICI; TVS diodes; device simulator; low-voltage IC; np/sup +/p/sup -/n four-layer structure; offchip protection; punchthrough mode; transient voltage suppressor; Diodes; Earth Observing System; Electrostatic discharge; Protection; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1995

Conference_Location

Phoenix, AZ, USA

Print_ISBN

1-878303-59-7

Type

conf

DOI

10.1109/EOSESD.1995.478265

Filename

478265