DocumentCode
2724674
Title
Weak inversion for ultra low-power and very low-voltage circuits
Author
Vittoz, Eric A.
Author_Institution
EPFL, Lausanne, Switzerland
fYear
2009
fDate
16-18 Nov. 2009
Firstpage
129
Lastpage
132
Abstract
This paper discusses techniques, limitations and possible future developments of circuits based on transistors operated in the weak inversion (w.i.) mode, also called sub-threshold mode. In analog circuits, w.i. is reached at very low current, but it is also needed for very low supply voltage. Its exponential behaviour can be exploited in special circuits schemes, some of them devised for bipolar transistors. For digital circuits, it can provide the ultimate speed/power ratio in a given process.
Keywords
CMOS integrated circuits; MOSFET; bipolar transistors; integrated circuit design; low-power electronics; CMOS technology; MOS transistors; analog circuits; bipolar transistors; digital circuits; low-voltage circuit; speed-power ratio; subthreshold mode operated transistors; ultralow-power circuit; weak inversion; Analog circuits; Bipolar transistors; CMOS technology; Digital circuits; Energy consumption; Low voltage; MOSFETs; Solid state circuits; Threshold voltage; Watches;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2009. A-SSCC 2009. IEEE Asian
Conference_Location
Taipei
Print_ISBN
978-1-4244-4433-5
Electronic_ISBN
978-1-4244-4434-2
Type
conf
DOI
10.1109/ASSCC.2009.5357240
Filename
5357240
Link To Document