DocumentCode
2724706
Title
Phase modulator with InGaAs/InAlAs FACQW grown by MOVPE
Author
Hasegawa, Ryo ; Sawai, Yutaka ; Amemiya, Tomohiro ; Arakawa, Taro ; Tanemura, Takuo ; Simizu, Hiromasa ; Tada, Kunio ; Nakano, Yoshiaki
Author_Institution
Yokohama Nat. Univ., Yokohama
fYear
2008
fDate
7-10 July 2008
Firstpage
1
Lastpage
3
Abstract
The optical properties of InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) grown by MOVPE are investigated. The FACQW phase modulator is fabricated and its large phase shift is successfully observed.
Keywords
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; integrated optics; optical modulation; phase modulation; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InGaAs-InAlAs; MOVPE; five-layer asymmetric coupled quantum well; optical properties; phase modulator; phase shift; Absorption; Chirp modulation; Epitaxial growth; Epitaxial layers; Indium compounds; Indium gallium arsenide; Optical modulation; Optical waveguides; Phase modulation; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Opto-Electronics and Communications Conference, 2008 and the 2008 Australian Conference on Optical Fibre Technology. OECC/ACOFT 2008. Joint conference of the
Conference_Location
Sydney
Print_ISBN
978-0-85825-807-5
Electronic_ISBN
978-0-85825-807-5
Type
conf
DOI
10.1109/OECCACOFT.2008.4610533
Filename
4610533
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