• DocumentCode
    2724716
  • Title

    Absorption saturation of AlN-based waveguide utilizing intersubband transition in GaN/AlN quantum wells

  • Author

    Iizuka, Norio ; Shimizu, Toshimasa ; Cumtornkittikul, Chaiyasit ; Sugiyama, Masakazu ; Nakano, Yoshiaki

  • Author_Institution
    Corp. R & D Center, Toshiba Corp., Kawasaki
  • fYear
    2008
  • fDate
    7-10 July 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    An AlN-based intersubband optical switch was investigated. Narrow absorption spectrum and low insertion loss were obtained. Absorption saturation by 10 dB was achieved at a wavelength of 1.42 mum with an energy of 50 pJ.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; optical switches; optical waveguides; semiconductor quantum wells; wide band gap semiconductors; GaN-AlN; absorption saturation; absorption spectrum; insertion loss; intersubband optical switch; intersubband transition; quantum wells; waveguide utilizing; Absorption; Gallium nitride; High speed optical techniques; Insertion loss; Molecular beam epitaxial growth; Optical devices; Optical switches; Optical waveguides; Quantum well devices; Waveguide transitions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Opto-Electronics and Communications Conference, 2008 and the 2008 Australian Conference on Optical Fibre Technology. OECC/ACOFT 2008. Joint conference of the
  • Conference_Location
    Sydney
  • Print_ISBN
    978-0-85825-807-5
  • Electronic_ISBN
    978-0-85825-807-5
  • Type

    conf

  • DOI
    10.1109/OECCACOFT.2008.4610534
  • Filename
    4610534
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2724716