• DocumentCode
    2724720
  • Title

    Nanoelectronics devices: More CMOS, fusion CMOS and beyond CMOS

  • Author

    Watanabe, Hisatsune

  • Author_Institution
    Semiconductor Leading Edge Technologies, Inc.
  • fYear
    2009
  • fDate
    16-18 Nov. 2009
  • Firstpage
    5
  • Lastpage
    8
  • Abstract
    We are facing several difficulties with shrinking LSI chips, such as leakage currents/power consumption, variability, huge costs in R&D and production. Major semiconductor market will be absolutely dependent on further shrinking of Si CMOS transistors with improving transistor structures and lowering drive voltage, increasing wafer diameter and 3D stacking package structures. This way is ¿More CMOS¿ (More Moore) strategy. On the other hand, the semiconductor market will expand by integrating CMOS with new functional materials, such as optical-, flexible-, spin- mechanical-, bio-, and nano-carbon devices. This way is ¿Fusion CMOS¿. ¿Beyond CMOS¿ circuit algorithm is intensively exploited mainly by academic sites. For acceleration of the commercialization of those R&D efforts for More CMOS, Fusion CMOS and Beyond CMOS, we need a new type of integration verification services for R&D people, particularly for university people. This might be a global need in the forthcoming nanoelectronics era.
  • Keywords
    CMOS integrated circuits; elemental semiconductors; large scale integration; leakage currents; nanoelectronics; semiconductor industry; silicon; transistors; 3D stacking package structures; Beyond CMOS circuit algorithm; Fusion CMOS circuit algorithm; More CMOS circuit algorithm; R&D people; Si; Si CMOS transistors; commercialisation; integration verification services; leakage currents; nanocarbon devices; nanoelectronics devices; power consumption; semiconductor market; shrinking LSI chips; transistor structures; Costs; Energy consumption; Large scale integration; Leakage current; Nanoelectronics; Production; Semiconductor device packaging; Stacking; Transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2009. A-SSCC 2009. IEEE Asian
  • Conference_Location
    Taipei
  • Print_ISBN
    978-1-4244-4433-5
  • Electronic_ISBN
    978-1-4244-4434-2
  • Type

    conf

  • DOI
    10.1109/ASSCC.2009.5357243
  • Filename
    5357243