Title :
Probing the electrical properties of the Si nitride/Si interface
Author :
Tsonos, C. ; Kanapitsas, A. ; Karagounis, A. ; Stavrakas, I. ; Triantis, D. ; Anastasiadis, C. ; Photopoulos, P. ; Vamvakas, V. Em ; Pissis, P.
Author_Institution :
Electron. Dept., Technol. Educ. Inst. of Lamia, Lamia, Greece
Abstract :
The present publication employs Dielectric Relaxation Spectroscopy for the examination of the relaxation mechanisms in silicon nitride MIS structures. These results are combined with capacitance and conductance measurements in order to give a more complete picture of the dielectric behaviour of silicon nitride. The analysis concludes with a method based on Dielectric Relaxation Spectroscopy for the calculation of the depletion layer width.
Keywords :
MIS structures; aluminium; capacitance; capacitance measurement; dielectric relaxation; electrical conductivity; electrochemical impedance spectroscopy; elemental semiconductors; interface structure; inversion layers; ohmic contacts; silicon; silicon compounds; Al-Si3N4-Si; Ohmic contacts; Si; capacitance measurement; conductance measurement; depletion layer; dielectric relaxation spectroscopy; electrical properties; inversion layers; silicon nitride MIS structures; Capacitance measurement; Crystallization; Dielectric measurements; Electrochemical impedance spectroscopy; Microelectronics; Photovoltaic cells; Poisson equations; Schottky diodes; Silicon; Voltage;
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-7200-0
DOI :
10.1109/MIEL.2010.5490441
