• DocumentCode
    2724794
  • Title

    Random Telegraph Noise characterization of p-type silicon nanowire FinFETs

  • Author

    Mukherjee, C. ; Maiti, T.K. ; Maiti, C.K.

  • Author_Institution
    Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
  • fYear
    2010
  • fDate
    16-19 May 2010
  • Firstpage
    447
  • Lastpage
    450
  • Abstract
    Random Telegraph Noise (RTN) characteristics of p-type silicon nanowire FinFET have been studied. It is shown that from multilevel RTN noise characteristics the presence of multiple traps inside the gate oxide may be predicted.
  • Keywords
    MOSFET; nanowires; random noise; silicon; Si; gate oxide; multilevel RTN noise characteristics; multiple traps; p-type silicon nanowire FinFET; random telegraph noise characterization; Channel bank filters; Electron emission; Electron traps; FinFETs; Low-frequency noise; Microelectronics; Potential well; Silicon; Telegraphy; Voltage; capture and emission time; complex RTS; nanowire FinFETs; random telegraph noise; surface potential; trap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Proceedings (MIEL), 2010 27th International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    978-1-4244-7200-0
  • Type

    conf

  • DOI
    10.1109/MIEL.2010.5490445
  • Filename
    5490445
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2724794