Title :
Doping of Ta2O5 as a way to extend its potential for DRAM applications
Author :
Atanassova, E. ; Paskaleva, A. ; Spassov, D.
Author_Institution :
Inst. of Solid St. Phys., Bulg. Acad. of Sci., Sofia, Bulgaria
Abstract :
The doping of Ta2O5 films with a proper element or its mixing with another high-k dielectric as a breakthrough to tailor Ta2O5 properties towards meeting the criteria for future technological nodes are discussed. Essential in the engineering of advanced DRAM storage capacitors parameters and characteristics of Ti-doped Ta2O5, Hf-doped Ta2O5 and mixed HfO2-Ta2O5 layers as an illustration of both the benefits and the disadvantages of modified Ta2O5-based stacks are presented.
Keywords :
DRAM chips; capacitors; dielectric materials; semiconductor doping; tantalum compounds; DRAM storage capacitors; Ta2O5; doping; high-k dielectric; Capacitors; Crystalline materials; Crystallization; Doping; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFETs; Random access memory; Stability;
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-7200-0
DOI :
10.1109/MIEL.2010.5490449
