Title :
Preliminary study on polycrystalline diamond films suitable for radiation detection
Author :
Acquafredda, P. ; Bisceglie, E. ; Bottalico, D. ; Brescia, R. ; Brigida, M. ; Caliandro, G.A. ; Capitelli, M. ; Casamassima, G. ; Cassano, T. ; Celiberto, R. ; Cicala, G. ; Crismale, V. ; De Giacomo, A. ; De Pascale, O. ; Favuzzi, C. ; Ferraro, G. ; Fusco
Author_Institution :
Dipt. Geomineralogico, Univ. di Bari, Bari, Italy
Abstract :
The microwave plasma enhanced chemical vapor deposition technique has been employed to grow polycrystalline diamond films on p-doped Si (100) substrates starting from highly diluted (1% CH4 in H2) gas mixtures. Coplanar interdigitated Cr/Au contacts have been thermally evaporated on two samples about 8 mum thick having different grain size. Dark current-voltage (I-V) measurements and impedance characterization have been found to be dependent on the grain size and on the quality of the examined samples.
Keywords :
dark conductivity; diamond; elemental semiconductors; grain size; plasma CVD; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; wide band gap semiconductors; C; Cr-Au; Si; coplanar interdigitated contacts; dark current-voltage measurements; doping; grain size; impedance characterization; microwave plasma enhanced chemical vapor deposition technique; polycrystalline diamond films; radiation detection; thermal evaporation; wide band gap semiconductor; Chemical vapor deposition; Chromium; Current measurement; Gold; Grain size; Impedance measurement; Microwave theory and techniques; Plasma chemistry; Radiation detectors; Semiconductor films;
Conference_Titel :
Advances in sensors and Interfaces, 2009. IWASI 2009. 3rd International Workshop on
Conference_Location :
Trani
Print_ISBN :
978-1-4244-4708-4
Electronic_ISBN :
978-1-4244-4709-1
DOI :
10.1109/IWASI.2009.5184770
