Title :
Benchmarking of HBT models for InP based DHBT modeling
Author :
Ghosh, S. ; Zimmer, T. ; Ardouin, B. ; Maneux, C. ; Fregonese, S. ; Marc, F. ; Grandchamp, B. ; Kone, G.A.
Author_Institution :
IMS Lab., Univ. Bordeaux 1, Talence, France
Abstract :
In this paper the modeling results of a given InP/InGaAs/InP DHBT technology (0.7 × 7 μm emitter area) have been shown with two advanced compact models, HICUM L0 and Agilent HBT. Shortcomings of these models have been pointed out and their suitability for modeling these high frequency devices has been discussed.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; Agilent HBT; DHBT modeling; HBT models; InP-InGaAs-InP; high frequency devices; Current density; Electrons; Frequency; Heterojunction bipolar transistors; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Microelectronics; Photonic band gap; Solid modeling;
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-7200-0
DOI :
10.1109/MIEL.2010.5490456
