DocumentCode
2724956
Title
Benchmarking of HBT models for InP based DHBT modeling
Author
Ghosh, S. ; Zimmer, T. ; Ardouin, B. ; Maneux, C. ; Fregonese, S. ; Marc, F. ; Grandchamp, B. ; Kone, G.A.
Author_Institution
IMS Lab., Univ. Bordeaux 1, Talence, France
fYear
2010
fDate
16-19 May 2010
Firstpage
399
Lastpage
402
Abstract
In this paper the modeling results of a given InP/InGaAs/InP DHBT technology (0.7 × 7 μm emitter area) have been shown with two advanced compact models, HICUM L0 and Agilent HBT. Shortcomings of these models have been pointed out and their suitability for modeling these high frequency devices has been discussed.
Keywords
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; Agilent HBT; DHBT modeling; HBT models; InP-InGaAs-InP; high frequency devices; Current density; Electrons; Frequency; Heterojunction bipolar transistors; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Microelectronics; Photonic band gap; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location
Nis
Print_ISBN
978-1-4244-7200-0
Type
conf
DOI
10.1109/MIEL.2010.5490456
Filename
5490456
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