DocumentCode :
2725069
Title :
Newly developed ultra low CTE materials for thin core PKG
Author :
Miyatake, Masato ; Murai, Hikari ; Takanezawa, Shin ; Tsuchikawa, Shinji ; Takekoshi, Masaaki ; Kotake, Tomohiko ; Ose, Masahisa
Author_Institution :
Tsukuba Res. Lab., Hitachi Chem. Co., Ltd., Chikusei, Japan
fYear :
2012
fDate :
May 29 2012-June 1 2012
Firstpage :
1588
Lastpage :
1592
Abstract :
To achieve the recent improvements in miniaturization and performance of mobile devices (Smart phone, Tablet PC etc.), the semiconductor PKG substrate installed in these devices is demanded to be thinner and higher in density. However, the thinner PKG substrate may cause poor connection reliability due to increased warpage by soldering. The ultra low CTE (Coefficient of thermal expansion) core material has been required as the key solution for the reduction of the warpage of the thinner PKG substrate such as PoP (Package on package). We have just developed two types of ultra low CTE core materials named E-705G and E-800G to meet with the requirement, applying our original resin systems and the filler surface treatment technologies. The developed materials show the ultra low CTE(X, Y) property (2.8-3.3 ppm/°C) similar to that of glass fabric itself. Also E-705G has high flexural modulus over 33-36 GPa at room temperature. Regarding E-800G, it has the good dielectric characteristics (lower dielectric constant and dissipation factor), can be applicable higher speed PKG. Both of the materials have high reliability and high heat resistance which is suitable for the lead-free soldering process. Confirming the warpage property, we evaluated the warpage behavior of PoP (bottom) constructions before/after assembly process. The newly developed materials showed the much lower warpage than the conventional low CTE material.
Keywords :
electronics packaging; filled polymers; mobile handsets; permittivity; resins; soldering; thermal expansion; CTE core material; E-705G; E-800G; dielectric characteristics; dielectric constant; dissipation factor; filler surface treatment technology; flexural modulus; lead free soldering process; mobile device miniaturization; pressure 33 GPa to 36 GPa; resin systems; semiconductor PKG substrate; temperature 293 K to 298 K; thin core PKG; ultra low CTE material; ultra low coefficient of thermal expansion; warpage behavior; Glass; Resins; Resistance; Resistance heating; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location :
San Diego, CA
ISSN :
0569-5503
Print_ISBN :
978-1-4673-1966-9
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2012.6249048
Filename :
6249048
Link To Document :
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