Title :
Polyhedral oligomeric silsesquioxanes (POSS)-filled underfill with excellent high temperature performance
Author :
Lin, Ziyin ; Lau, Shunyi ; Moon, Kyoung-sik ; Wong, C.P.
Author_Institution :
Sch. of Mater. Sci. & Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
May 29 2012-June 1 2012
Abstract :
Advanced underfill material plays an important role in device reliability by distributing the thermal stress and providing environmental protection. Recently there is an increasing demand for low stress underfill which requires low coefficient of thermal expansion (CTE), low modulus and good flowablity. In this report, polyhedral oligomeric silsesquioxanes (POSS) functionalized with epoxy groups are used as potential CTE reducing fillers due to their ability to participant in the polymerization reaction. It was found that the POSS/epoxy composite shows excellent high temperature performance, including the increased Tg, lowered CTE and high storage modulus above Tg, and good thermal stability. Moreover, the effects of the length of organic moieties on the chemical and thermomechanical properties of POSS/epoxy composite were systematically investigated.
Keywords :
integrated circuit reliability; polymerisation; thermal expansion; thermal stability; thermal stresses; POSS-epoxy composite; environmental protection; epoxy groups; excellent high temperature performance; flowablity; low stress underfill; polyhedral oligomeric silsesquioxanes; reliability; thermal expansion; thermal stability; thermomechanical properties; Curing; Epoxy resins; Heating; Loading; Silicon compounds; Thermal stability;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1966-9
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2012.6249050