Title :
Low temperature bonding using non-conductive adhesive for 3D chip stacking with 30μm-pitch micro solder bump interconnections
Author :
Lin, Yu-Min ; Zhan, Chau-Jie ; Kao, Kuo-Shu ; Fan, Chia-Wen ; Chung, Su-Ching ; Huang, Yu-Wei ; Huang, Shin-Yi ; Chang, Jing-Yao ; Yang, Tsung-Fu ; Lau, John H. ; Chen, Tai-Hung
Author_Institution :
Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
fDate :
May 29 2012-June 1 2012
Abstract :
Due to the raising requirements of functionality and performance in consumer electronics, high density package technology including high I/O interconnections and 3D chip-stacking technology have received a great number of attentions. Solder micro bumps are widely applied in high density interconnections packaging, but its bonding temperature is still high during process. During chip stacking process, high bonding temperature would lead chip damage and chip warpage induced by the mismatch of coefficient of thermal expansion among each structure within the chip. Also, warpage would cause stress concentration happened within the chip and damage the device and micro interconnections. In order to meet the purpose of low temperature bonding, we demonstrated the chip-to-chip stacking module with a bump pitch of 30um by using non-conductive film in this study. The reliability of the chip-stacking module produced by such low temperature bonding approach was also estimated. A chip-on-chip (COC) structure was used as the test vehicles. There were about 3000 bumps totally in this test vehicle. For evaluating the feasibility of adhesive bonding by NCF in fine pitch micro bumps, Cu/Ni/Au micro bumps joined with Cu/Sn solder micro bumps was conducted by using NCF in this study. After assembly process, thermal cycling test, thermal humidity storage test and high current test were carried out to evaluate the reliability performance of the micro interconnections by such low temperature bonding approach. In this investigation, the chip-on-chip stacking module with a bump pitch of 30μm by using non-conductive film was achieved. The bonding results revealed that the contact resistance of micro joints was about 100 ~ 350 MΩ. The high deviation of contact resistance was due to the non-melting contact between joined micro bump by soft tin solder. The reliability results revealed that the chip-stacking module produced by NCF could pass the reliability test of 1000 cycles of- TCT and 1000 hours of THST. The results of high current test also showed that the NCF joint had excellence endurance against high current density of 5×104 A/cm2 for more than 1300 hours with an increase of contact resistance less than 2%. This study displayed that the NCF material had great potential to be applied in fine-pitch 3D chip stacking. The multi-chip stacking module with a TSV pitch of 20μm produced by NCF will also be presented in this investigation.
Keywords :
adhesive bonding; assembling; current density; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; solders; stacking; thermal expansion; three-dimensional integrated circuits; 3D chip-stacking technology; COC structure; I/O interconnections; NCF joint; NCF material; THST; TSV pitch; assembly process; chip damage; chip warpage; chip-on-chip structure; chip-to-chip stacking module reliability; consumer electronics; contact resistance deviation; current density; fine pitch microbumps; fine-pitch 3D chip stacking; high current test; high density package technology; high-density interconnections packaging; low temperature bonding approach; microinterconnection reliability performance evaluation; microsolder bump interconnections; multichip stacking module; nonconductive adhesive bonding; nonconductive film; nonmelting contact; size 20 mum; size 30 mum; stress concentration; test vehicles; thermal cycling test; thermal expansion coefficient; thermal humidity storage test; tin solder; Bonding; Contact resistance; Joints; Reliability; Stacking; Through-silicon vias; Tin;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1966-9
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2012.6249060