Title :
Evolution of resist roughness during development: Stochastic simulation and dynamic scaling analysis
Author :
Constantoudis, V. ; Patsis, G.P. ; Gogolides, E.
Author_Institution :
Inst. of Microelectron., NCSR Demokritos, Aghia Paraskevi, Greece
Abstract :
The examination of the roughness evolution of open-surface resist films during development may elucidate the material origins of Line Edge Roughness. In this paper, a stochastic simulator of resist development is used and the surface roughness evolution is analyzed with dynamic scaling theory. A power-law increase of rms roughness and correlation length is found for resists with homogeneous solubility. The scaling exponents are shown to obey the dynamical scaling hypothesis of Family-Viscek. The insertion of inhomogeneity in the solubility of resist causes much larger increase of rms roughness and anomalous scaling behaviour. Comparison with experimental results shows good agreement with the simulation predictions.
Keywords :
resists; stochastic processes; surface roughness; Family-Viscek dynamical scaling hypothesis; anomalous scaling behaviour; correlation length; line edge roughness; open-surface resist films; power-law; resist roughness; rms roughness; stochastic simulation; Analytical models; Ionization; Kinetic theory; Material properties; Microelectronics; Polymer films; Resists; Rough surfaces; Stochastic processes; Surface roughness;
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-7200-0
DOI :
10.1109/MIEL.2010.5490483