Structure and properties of PZT/PT composite thin film on polysilicon electrode

Author

Xiaoqing, Wu ; Yintang, Yang ; Qin, Liu ; Liangying, Z. Hang ; Xi, Yao

Author_Institution

Electron. Mater. Res. Lab., Xi´´an Jiaotong Univ., China

Volume

2

fYear

1996

fDate

18-21 Aug 1996

Firstpage

1027

Abstract

Micro machining process can be much simplified when PZT thin film is directly deposited on doped polysilicon wafer which is used as bottom electrode in fabrication of micro actuators. However, the formation of perovskite phase for PZT thin film on polysilicon layer is difficult. The deposited thin film is very easy to crack. PT thin film was used as a transition layer between polysilicon wafer and PZT film. Crack-free PZT/PT composite thin film with perovskite structure was obtained by metallo-organic decomposition (MOD) method. By comparing the ferroelectric behaviors and C-V curves of PZT thin film on platinum which is widely used as bottom electrode in the study of ferroelectric thin films, the effects of polysilicon on crystalline structure and properties of the PZT/PT composite thin film were investigated

Keywords

composite materials; electrodes; ferroelectric thin films; lead compounds; micromachining; piezoceramics; silicon; C-V characteristics; PZT-PbTiO₃; PZT/PT composite thin film; PbZrO3TiO3-PbTiO3; Si; crystalline structure; ferroelectric properties; metallo-organic decomposition; microactuator fabrication; micromachining; perovskite phase; polysilicon electrode; Capacitance-voltage characteristics; Electrodes; Fabrication; Ferroelectric films; Ferroelectric materials; Machining; Microactuators; Platinum; Sputtering; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on

Conference_Location

East Brunswick, NJ

Print_ISBN

0-7803-3355-1

Type

conf

DOI

10.1109/ISAF.1996.598204

Filename

598204