Title :
Amplification of space charge waves at very high electric fields in GaAs films
Author :
Garcia-Barrientos, A. ; Palankovski, V. ; Grimalsky, V.
Author_Institution :
Dept. of Mechatron., Polytech. Univ. of Pachuca (UPP), Hidalgo, Mexico
Abstract :
The nonlinear interaction of space charge waves including the amplification in microwave range at high electric fields (10-300 kV/cm) in n-GaAs films, possessing the negative differential conductance phenomenon, is presented. Both the amplified signal at the first harmonic of the input signal and the generation of second and third harmonics of the input signal, which are due to the negative differential resistance effect at very high electric fields are shown.
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; semiconductor thin films; space charge waves; GaAs; electric fields; microwave range; negative differential conductance; negative differential resistance; space charge waves; thin films; Conductive films; Conductivity; Electrodes; Electrons; Frequency; Gallium arsenide; Microelectronics; Power harmonic filters; Semiconductor devices; Space charge;
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-7200-0
DOI :
10.1109/MIEL.2010.5490510
