Microchip laser Q-switched with GaInNAs/GaAs SESAM emitting 204 ps pulses at 1342 nm

Author

Nikkinen, J. ; KorpijaÌˆrvi, V.-M. ; Leino, I. ; HaÌˆrkoÌˆnen, A. ; Guina, M.

Author_Institution

Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland

Volume

51

Issue

11

fYear

2015

fDate

5 28 2015

Firstpage

850

Lastpage

852

Abstract

A 1342 nm Nd:YVO₄ microchip laser is reported, Q-switched with a dilute nitride GaInNAs/GaAs saturable absorber mirror. The laser produced optical pulses as short as 204 ps with 2.3 MHz repetition rate and 24 mW average output power. In comparison to conventional InP-based saturable absorber mirrors, the advantage of the proposed approach is the availability of excellent Bragg mirror materials that enable high reflectivity and more flexibility in designing the non-linear parameters owing to the use of lattice matched GaInNAs/GaAs quantum wells.

Keywords

III-V semiconductors; Q-switching; gallium arsenide; high-speed optical techniques; indium compounds; microchip lasers; mirrors; neodymium; optical saturable absorption; reflectivity; yttrium compounds; Bragg mirror materials; GaInNAs-GaAs; Q-switched microchip laser; SESAM; YVO₄:Nd; flexibility; frequency 2.3 MHz; lattice matched quantum wells; nonlinear parameters; optical pulses; power 24 mW; reflectivity; repetition rate; saturable absorber mirror; time 204 ps; wavelength 1342 nm;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2015.1000

Filename

7110758