Title :
Electronic structure of oxygen vacancy and poly-vacancy in α- and γ-Al2O3
Author :
Perevalov, T.V. ; Gritsenko, V.A.
Author_Institution :
Inst. of Semicond. Phys., Russian Acad. of Sci., Novosibirsk, Russia
Abstract :
Electronic structure of oxygen vacancies and poly-vacancies in high-k dielectric Al2O3 (α- and γ- phases) was calculated from the first principles. It was found, that oxygen vacancies can be both electron and hole trap in α- and γ-Al2O3. Our results give a reason to believe that high leakage current through ALD Al2O3 films may be caused by oxygen vacancies.
Keywords :
aluminium compounds; dielectric materials; electron traps; electronic structure; hole traps; leakage currents; vacancies (crystal); Al2O3; electron trap; electronic structure; high-k dielectric; hole trap; leakage current; oxygen vacancy; poly-vacancy; Aluminum oxide; Amorphous materials; Charge carrier processes; Crystallization; Dielectric devices; Electron traps; Flash memory; High-K gate dielectrics; Microelectronics; Oxygen;
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-7200-0
DOI :
10.1109/MIEL.2010.5490517
