• DocumentCode
    2725968
  • Title

    Electronic structure of oxygen vacancy and poly-vacancy in α- and γ-Al2O3

  • Author

    Perevalov, T.V. ; Gritsenko, V.A.

  • Author_Institution
    Inst. of Semicond. Phys., Russian Acad. of Sci., Novosibirsk, Russia
  • fYear
    2010
  • fDate
    16-19 May 2010
  • Firstpage
    123
  • Lastpage
    126
  • Abstract
    Electronic structure of oxygen vacancies and poly-vacancies in high-k dielectric Al2O3 (α- and γ- phases) was calculated from the first principles. It was found, that oxygen vacancies can be both electron and hole trap in α- and γ-Al2O3. Our results give a reason to believe that high leakage current through ALD Al2O3 films may be caused by oxygen vacancies.
  • Keywords
    aluminium compounds; dielectric materials; electron traps; electronic structure; hole traps; leakage currents; vacancies (crystal); Al2O3; electron trap; electronic structure; high-k dielectric; hole trap; leakage current; oxygen vacancy; poly-vacancy; Aluminum oxide; Amorphous materials; Charge carrier processes; Crystallization; Dielectric devices; Electron traps; Flash memory; High-K gate dielectrics; Microelectronics; Oxygen;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Proceedings (MIEL), 2010 27th International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    978-1-4244-7200-0
  • Type

    conf

  • DOI
    10.1109/MIEL.2010.5490517
  • Filename
    5490517
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2725968