• DocumentCode
    2726018
  • Title

    Electron spectrum of δ-doped quantum wells by Thomas — Fermi method at finite temperatures

  • Author

    Grimalsky, V. ; Gaggero-S, L.M. ; Koshevaya, S. ; Garcia-B, A.

  • Author_Institution
    Fac. of Sci., Autonomous Univ. of State Morelos (UAEM), Cuernavaca, Mexico
  • fYear
    2010
  • fDate
    16-19 May 2010
  • Firstpage
    119
  • Lastpage
    122
  • Abstract
    Electron spectrum of δ-doped quantum well in n-GaAs is investigated by means of Thomas - Fermi (TF) method at finite temperatures. This method shows fast convergence and good accuracy. At 2D doping 1013...2 × 1013 cm-2, the simplest TF method (T = 0) can be used up till the temperatures T ≤ 200 K.
  • Keywords
    III-V semiconductors; Thomas-Fermi model; gallium arsenide; semiconductor doping; semiconductor quantum wells; δ-doped quantum wells; GaAs; Thomas-Fermi method; doping; electron spectrum; Atomic beams; Atomic layer deposition; Convergence; Effective mass; Electrons; Microelectronics; Molecular beam epitaxial growth; Poisson equations; Semiconductor device doping; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Proceedings (MIEL), 2010 27th International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    978-1-4244-7200-0
  • Type

    conf

  • DOI
    10.1109/MIEL.2010.5490520
  • Filename
    5490520
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2726018