Switching behaviour of an auxiliary resonant commutated pole (ARCP) converter

Author

Pfisterer, H.-J. ; Späth, H.

Author_Institution

Electrotech. Inst., Karlsruhe Univ., Germany

fYear

2000

fDate

2000

Firstpage

359

Lastpage

364

Abstract

A fast switching IGBT converter in the 100 kVA range has been set-up using the ARCP converter principle. The converter offers soft switching capabilities and a significant decrease of the switching losses. This paper presents an analysis of the commutation process including the parasitic effects due to stray inductance and the special behaviour of the semiconductor switches at zero voltage switching. A simulation model is derived and verified by measuring the switching behaviour of the main switches

Keywords

bipolar transistor circuits; commutation; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; resonant power convertors; switching circuits; 100 kVA; auxiliary resonant commutated pole power converter; commutation process; fast switching IGBT converter; parasitic effects; semiconductor switches; simulation model; soft switching capabilities; stray inductance; switching behaviour; switching losses reduction; zero voltage switching; Diodes; Inductance; Insulated gate bipolar transistors; Pulse width modulation inverters; Resonance; Switches; Switching circuits; Switching converters; Switching frequency; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Congress, 2000. CIEP 2000. VII IEEE International

Conference_Location

Acapulco

Print_ISBN

0-7803-6489-9

Type

conf

DOI

10.1109/CIEP.2000.891440

Filename

891440