Title :
Quantization effects in gate-all-around nanowire MOSFETs: A numerical study
Author :
Gamal, Salah ; Selim, Dalia
Author_Institution :
Dept. of Eng. Phys. & Math., Ain Shams Univ., Cairo, Egypt
Abstract :
This paper presents a numerical study of quantization effects in gate-all-around nanowire transistors with circular cross section. The model is based on the self consistent solution of Schrödinger and Poisson equations. The eigenenergies and wavefunctions were first verified analytically whenever possible. Electron distribution profiles, body and surface potentials and capacitance characteristics are presented for specific examples.
Keywords :
MOSFET; Poisson equation; Schrodinger equation; nanowires; quantisation (quantum theory); surface potential; Schrodinger-Poisson equations; capacitance characteristics; circular cross section; electron distribution profiles; gate-all-around nanowire MOSFET; quantization effects; self consistent solution; surface potentials; Carrier confinement; Effective mass; Eigenvalues and eigenfunctions; Finite difference methods; MOSFETs; Mathematical model; Microelectronics; Poisson equations; Quantization; Schrodinger equation;
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-7200-0
DOI :
10.1109/MIEL.2010.5490521
