• DocumentCode
    2726035
  • Title

    Quantization effects in gate-all-around nanowire MOSFETs: A numerical study

  • Author

    Gamal, Salah ; Selim, Dalia

  • Author_Institution
    Dept. of Eng. Phys. & Math., Ain Shams Univ., Cairo, Egypt
  • fYear
    2010
  • fDate
    16-19 May 2010
  • Firstpage
    105
  • Lastpage
    108
  • Abstract
    This paper presents a numerical study of quantization effects in gate-all-around nanowire transistors with circular cross section. The model is based on the self consistent solution of Schrödinger and Poisson equations. The eigenenergies and wavefunctions were first verified analytically whenever possible. Electron distribution profiles, body and surface potentials and capacitance characteristics are presented for specific examples.
  • Keywords
    MOSFET; Poisson equation; Schrodinger equation; nanowires; quantisation (quantum theory); surface potential; Schrodinger-Poisson equations; capacitance characteristics; circular cross section; electron distribution profiles; gate-all-around nanowire MOSFET; quantization effects; self consistent solution; surface potentials; Carrier confinement; Effective mass; Eigenvalues and eigenfunctions; Finite difference methods; MOSFETs; Mathematical model; Microelectronics; Poisson equations; Quantization; Schrodinger equation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Proceedings (MIEL), 2010 27th International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    978-1-4244-7200-0
  • Type

    conf

  • DOI
    10.1109/MIEL.2010.5490521
  • Filename
    5490521
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2726035