Title :
An 8-way power-combining E-band amplifier in a SiGe HBT technology
Author :
Öjefors, Erik ; Stoij, Christer ; Heinemann, B. ; Rücker, Holger
Author_Institution :
Sivers IMA AB, Kista, Sweden
Abstract :
An E-band power amplifier is demonstrated in an evaluation version of a fT/fmax 300-GHz/450-GHz SiGe:C BiCMOS technology. Eight-way power combining of the outputs of transformer-matched differential-cascode unit cells is used in the final stage of the amplifier. A breakout of the final stage yields a measured small-signal gain of 14 dB at 80 GHz with a 16-GHz bandwidth, whereas a version of the amplifier with an integrated 4-way power-combined pre-driver provides 28 dB gain. In the 71-76-GHz sub-band, a saturated output power of 22 dBm with an output 1-dB compression point of 20 dBm is measured, while 19 dBm output power and a 17-dBm compression point is obtained in the 81-86-GHz band. The current consumption at a 3.3-V supply voltage is 330 mA for the output stage and 500 mA for the amplifier with an integrated pre-driver.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; amplifiers; bipolar MIMIC; field effect MIMIC; heterojunction bipolar transistors; millimetre wave amplifiers; submillimetre wave amplifiers; BiCMOS technology; HBT technology; SiGe:C; bandwidth 16 GHz; frequency 300 GHz; frequency 450 GHz; frequency 71 GHz to 76 GHz; frequency 80 GHz; frequency 81 GHz to 86 GHz; gain 14 dB; gain 28 dB; power combining E-band amplifier; BiCMOS integrated circuits; Gain; Impedance; Impedance matching; Power generation; Power measurement; Silicon germanium; Millimeter wave integrated circuits; heterojunction bipolar transistors; power amplifiers; silicon;
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
DOI :
10.1109/EuMIC.2014.6997787
