Title :
Low slow-wave effect and crosstalk for low-cost ABF-coated TSVs in 3-D IC interposer
Author :
Chang, Yu-Jen ; Zheng, Tai-Yu ; Chuang, Hao-Hsiang ; Wang, Chuen-De ; Chen, Peng-Shu ; Kuo, Tzu-Ying ; Zhan, Chau-Jie ; Wu, Shih-Hsien ; Lo, Wei-Chung ; Lu, Yi-Chang ; Chiou, Yih-Peng ; Wu, Tzong-Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
May 29 2012-June 1 2012
Abstract :
A solution for reducing the signal distortion in SiO2-coated through silicon vias (TSVs) is proposed. The mechanism can be explained by using a verified equivalent circuit model of a four-TSV system. Based on this circuit model, the phenomena that larger thickness of dielectric layer causes lower slow-wave factor (SWF), smaller insertion loss and smaller crosstalk level can be observed. With the aid of ajinomoto-build-up-film-coated (ABF-coated) TSVs, the solution can be implemented. The insertion loss is 3 dB better, the near-end crosstalk is 5 dB better, and the far-end crosstalk is 25dB better than conventional SiO2-coated TSVs at 2 GHz. Measurement results are also given. Good consistency can be seen, and can support the conclusion of the simulation results.
Keywords :
dielectric materials; equivalent circuits; silicon compounds; three-dimensional integrated circuits; 3D IC interposer; SiO2; dielectric layer; equivalent circuit model; far-end crosstalk; frequency 2 GHz; loss 3 dB; low slow-wave effect; low-cost ajinomoto-build-up-film-coated TSV; near-end crosstalk; slow-wave factor; through-silicon-via technology; Crosstalk; Dielectrics; Equivalent circuits; Insertion loss; Integrated circuit modeling; Silicon; Through-silicon vias;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1966-9
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2012.6249103
