DocumentCode
2726204
Title
BJT static behavior improvement by modification of the epitaxial layer
Author
Theolier, L. ; Phung, L.V. ; Batut, N. ; Schellmanns, A. ; Raingeaud, Y. ; Quoirin, J.-B.
Author_Institution
Power Microelectron. Lab., Univ. of Tours, Tours, France
fYear
2010
fDate
16-19 May 2010
Firstpage
79
Lastpage
82
Abstract
In this paper, high voltage Bipolar Junction Transistors are presented and compared in order to suggest a bidirectional switch for household appliances with fully turn-on, turn-off control. A comparative theoretical study, using 2D simulations, shows that concepts like “superjunctions” and “floating islands” improve the static current gain without unwanted behavior like parasitic diodes.
Keywords
bipolar transistors; epitaxial layers; BJT static behavior improvement; bidirectional switch; epitaxial layer; floating islands; high voltage bipolar junction transistors; household appliances; parasitic diodes; static current gain; turn-off control; turn-on control; Conductivity; Current density; Diodes; Doping; Epitaxial layers; Home appliances; Microelectronics; Neodymium; Switches; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location
Nis
Print_ISBN
978-1-4244-7200-0
Type
conf
DOI
10.1109/MIEL.2010.5490530
Filename
5490530
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