Title :
Future trends in high power devices
Author_Institution :
Semicond., ABB Switzerland, Ltd., Lenzburg, Switzerland
Abstract :
Power devices for MW and GW power electronics are discussed. The most important device concepts of today are Phase Controlled Thyristor (PCT), Integrated Gate Commutated Thyristor (IGCT), Insulated Gate Bipolar Transistor (IGBT), and PIN diode. In spite of long-term intensive research of compound semiconductor materials and related devices, the world of high-power devices is dominated by silicon. In the light of this reality, the major trends in high-power electronics are discussed using some representative examples of state-of-the-art devices and showing their outlook.
Keywords :
insulated gate bipolar transistors; p-i-n diodes; thyristors; PIN diode; compound semiconductor materials; high power devices; high-power electronics; insulated gate bipolar transistor; integrated gate commutated thyristor; phase controlled thyristor; Bipolar transistors; CMOS technology; Insulated gate bipolar transistors; MOSFET circuits; Microelectronics; Power electronics; Silicon; Switches; Thyristors; Voltage;
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-7200-0
DOI :
10.1109/MIEL.2010.5490532
