Nonlinearity Analysis of FinFETs

Double-gate MOS transistors and their vertical version, FinFETs, are very promising for integrated circuit low signal analog applications. In this paper we present, for the first time, the nonlinearity analysis of this type of devices which complements the already done studies about the advantages and possibilities of FinFET for analog application. The analysis was done using the transfer DC characteristics in saturation, calculating THD and HD3 by the integral function method. Complementary figures-of-merit THD/Avo and HD3/Avo were also calculated. FinFETs of different channel lengths and different fin widths were studied. Results are compared with those obtained for single-gate fully-depleted (FD) SOI MOSFETs with HALO. From the present study we can conclude that analyzed FinFETs can have better or worse nonlinearity behavior than FD SOI MOSFETs with HALO depending on the operating conditions