Title :
Modeling the Post-Breakdown Current in MOS devices on p-silicon substrate
Author :
Ortiz-Conde, A. ; Miranda, E. ; Sanchez, F. J Garcia ; Farkas, E. ; Malobabic, S.
Author_Institution :
Solid State Electron. Lab., Simon Bolivar Univ., Caracas
Abstract :
A model for the post-breakdown leakage current in MOS p-silicon devices with ultra thin oxides is presented. The model is based on a combination of two ideal diodes and two resistances. Model parameters are extracted using nonlinear optimization
Keywords :
MOSFET; elemental semiconductors; leakage currents; semiconductor device breakdown; semiconductor device models; silicon; MOS devices; MOS p-silicon devices; Si; model parameters; nonlinear optimization; p-silicon substrate; post-breakdown leakage current; ultra thin oxides; Breakdown voltage; Circuit simulation; Current measurement; Current-voltage characteristics; Diodes; Electric breakdown; Equivalent circuits; MOS capacitors; MOS devices; Thickness measurement; Oxide breakdown; metal-oxide-semiconductor; reliability;
Conference_Titel :
Devices, Circuits and Systems, Proceedings of the 6th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
1-4244-0041-4
Electronic_ISBN :
1-4244-0042-2
DOI :
10.1109/ICCDCS.2006.250828
